MODELING ION IMPLANTATION IN GAAS(001) SINGLE CRYSTALS FOR IMPROVED SOLAR CELL PERFORMANCE

Authors

  • Khafizov Islom Ikramovich Asia International University
  • Artyomenko Kirill Igorevich Belarusian National Technical University

Keywords:

p-n transition, light losses, reflex ion coefficient, an electron-hole, diffusions length, ionic implantation, target orientation, introduction coefficient, the semi channel, focusing.

Abstract

On purpose increase efficiency of solar elements it has been investigated process of ionic implantation influencing the big number of the interconnected coefficients, most important of which is target orientation, a grade, initial energy and a corner of falling of primary particles.

References

Chopra K. Thin-film solar elements / К. Chopra,; Moskva, 1986.

Resources and efficiency of use of renewed energy sources / P.P. Bezrukix. – Sankt-Peterburg: Nauka, 2002.

Physics of a firm body: the Manual / I.K. Vereofgin. / Moskva, 2001.

Bahadyrhanov M. S, Marovtsev A.S., Tachilins S.A., Research methods of solar elements, Toshkent, 2009.

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Published

2026-05-10

How to Cite

Khafizov Islom Ikramovich, & Artyomenko Kirill Igorevich. (2026). MODELING ION IMPLANTATION IN GAAS(001) SINGLE CRYSTALS FOR IMPROVED SOLAR CELL PERFORMANCE. Ethiopian International Journal of Multidisciplinary Research, 13(5), 654–658. Retrieved from https://eijmr.org/index.php/eijmr/article/view/6707

Issue

Vol. 13 No. 5 (2026): Ethiopian International Journal of Multidisciplinary Research

Section

Articles