DISTRIBUTION OF LOCALIZED ENERGY LEVELS IN GLASSY SEMICONDUCTORS

Gulxayot Xolyigitova Sulaymanovna

Authors

Gulxayot Xolyigitova Sulaymanovna Andijon state technical institute, assistant

Keywords:

glassy semiconductors, amorphous semiconductors, localized energy states, density of states, band tail states, charge carrier transport, hopping conduction, electronic structure, disordered semiconductors.

Abstract

This study examines the distribution of localized energy states in glassy (amorphous) semiconductors and their impact on the electronic properties of disordered materials. Due to the absence of long-range atomic order, localized states are formed within the energy gap, including band-tail states near the band edges and deep defect states in the middle of the gap. These states significantly influence charge carrier transport, electrical conductivity, and optical absorption. The analysis highlights the role of structural disorder and defects in determining the density of states and the mechanisms of hopping conduction. The results contribute to a better understanding of electronic processes in amorphous semiconductors and their applications in modern optoelectronic devices.