THE IMPACT OF HEAT TREATMENT ON THE STRUCTURAL AND SPECTRAL CHARACTERISTICS OF THE RAMAN SPECTRUM OF MONOCRYSTALLINE SILICON
Keywords:
Monocrystalline silicon, thermal treatment, Raman spectroscopy, optical phonons, amorphous clusters, nanocrystals.Abstract
This study investigates how thermal treatment affects the structural characteristics of monocrystalline silicon. Analyzing the Raman spectra of n-type and p-type silicon samples reveals low-intensity peaks with broad half-widths, indicating interactions of transverse optical phonons. This suggests the presence of small crystalline regions and amorphous zones within the samples. At a temperature of 1000°C, silicon and oxygen atoms begin to rearrange, facilitating the formation of amorphous clusters. This transformation is particularly noticeable in p-type silicon samples, where thermal treatment leads to the emergence of nanocrystallites. However, as the temperature rises to 1100°C, these nanocrystallites are converted back into amorphous clusters due to the presence of impurity atoms. This phenomenon clearly demonstrates that elevated temperatures can significantly impact the atomic structure of silicon, altering both its crystalline and amorphous regions. The changes in these regions result in substantial modifications to the overall structural properties of silicon. These observations highlight the intricate relationship between temperature and atomic behavior in shaping material characteristics. Understanding this complex interplay is essential for grasping the effects of thermal treatments on semiconductor materials, particularly silicon. Such insights are crucial for optimizing semiconductor manufacturing processes and ensuring the desired performance characteristics of final products.
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