THE UNIQUE PROPERTIES OF SEMICONDUCTOR MATERIALS AND THE ROLE OF THEIR MATHEMATICS MODELS

Authors

  • Raxmanov Ulug‘bek Musirmon ugli, Samandarov Toji Normurodovich University of business and science Toshkent filiali

Keywords:

semiconductor materials, electrical conductivity, doping, p–n junction, forbidden energy band, optoelectronics, nanoelectronics.

Abstract

This study analyzes the electrical and optical properties of semiconductor materials and their significance in modern electronic devices. During the research, the dependence of electrical resistivity on temperature and doping concentration, the formation mechanism of p–n junctions, and the influence of the forbidden energy band width on optoelectronic characteristics were investigated. The obtained analytical results indicate that devices based on silicon, germanium, and gallium arsenide exhibit high efficiency in microelectronics, nanoelectronics, and optoelectronics.

References

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Published

2026-01-28

How to Cite

Raxmanov Ulug‘bek Musirmon ugli, Samandarov Toji Normurodovich. (2026). THE UNIQUE PROPERTIES OF SEMICONDUCTOR MATERIALS AND THE ROLE OF THEIR MATHEMATICS MODELS. Ethiopian International Multidisciplinary Research Conferences, 1(2), 308–311. Retrieved from https://eijmr.org/conferences/index.php/eimrc/article/view/1856